Samsung has begun mass production of 1 terabyte of eUFS 2.1 storage, the company said today. The announcement follows rumors that the company would introduce a Galaxy S10 variant with a terabyte of storage space. The high-capacity flash memory uses the same physical space as the previously announced 512-GB flash memory found in the high-end version of the Galaxy Note 9.
The memory is based on Samsung's advanced V-NAND flash memory technology, which has improved density, lower power requirements and generally higher speeds. It utilizes the vertical stacking of individual NAND cells, which is much more efficient compared to the horizontal arrangement of regular NANDs.
What can users expect?
While Samsung claims that eUFS 2.1-based memory can achieve sequential read speeds of up to 1,000 megabytes per second, this number is unlikely to be used in practice. Random speeds are what matters, and preliminary figures released by Samsung show that these values have also improved significantly.
In particular, random writing speeds should allow applications such as continuous burst shooting. So far, most phones have been limited to a few seconds of high-speed video recording. According to Samsung, the new read and write speeds of the new V-NAND based 1 terabyte storage solution are sufficient to enable continuous long-term video capture at 960 frames per second.
Flash memory production has begun at the Samsung plant in Pyeongtaek, Korea, and we expect the launch of high-capacity phones to begin at MWC. Given the previous speculation and the confirmed launch of the Galaxy S10 on February 20, there is a good chance that the memory in a version of this phone is included.
What do you think about a terabyte of space on a phone? Are you carrying enough media to justify your high capacity, or have you chosen a cloud-first future? Let us know in the comments!