There are still five days to go before selling the Samsung Galaxy S10, S10 + and S10e in the US, Europe, India and other markets around the world. In terms of internal hardware, the phones come in two variants: a Qualcomm Snapdragon 855 variant for USA / China / Latin America and an Exynos 9820 variant for the rest of the world. What we did not know before was the memory specification of the phones. Samsung has been using UFS memory since the Samsung Galaxy S6, and the company's 2018 phones used UFS 2.1 NAND. There were some rumors last year that the Galaxy S10 series would have UFS 3.0 storage, but a TechInsights ripper reveals that the rumor did not turn out.
TechInsights demolished the Exynos Samsung Galaxy S1
According to TechInsights, the company has rated the Galaxy S10 phones as the same Samsung KLUDG4U1EA-B0C1, a 128GB UFS 2.1 NAND found in the Samsung Galaxy Note 9 and many other phones.
UFS 3.0 predictably offers faster performance than UFS 2.1. Samsung's newly announced 512GB eUFS 3.0 (February 2019) NAND features sequential read speeds of up to 2100 MB / s (x2.10), sequential write speeds of up to 410 MB / s (x 1.58), and random read speeds of 63,000 IOPS (x1). 09) and random write speeds of 68,000 IOPS (x1.36). These numbers are faster than the latest 1 TB eUFS 2.1 (January 2019) NAND and can be compared in the table below.
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